Laser Interactions for the Synthesis and In Situ Diagnostics of Nanomaterials

Laser interactions have traditionall been at thec center of nanomaterials science, providing highly nonequilibrium growth conditions to enable the syn- thesis of novel new nanoparticles, nanotubes, and nanowires with metastable phases. Simultaneously, lasers provide unique opportunities for the remote char- acterization of nanomaterial size, structure, and composition through tunable laser spectroscopy, scattering, and imaging. Pulsed lasers offer the opportunity, there- fore, to supply the required energy and excitation to both control and understand the growth processes of nanomaterials, providing valuable views of the typically nonequilibrium growth kinetics and intermediates involved. Here we illustrate the key challenges and progress in laser interactions for the synthesis and in situ diagnostics of nanomaterials through recent examples involving primarily carbon nanomaterials, including the pulsed growth of carbon nanotubes and graphene

Influence of Ni Catalyst Layer and TiN Diffusion Barrier on Carbon Nanotube Growth Rate

Dense, vertically aligned multiwall carbon nanotubes were synthesized on TiN electrode layers for infrared sensing applications. Microwave plasma-enhanced chemical vapor deposition and Ni catalyst were used for the nanotubes synthesis. The resultant nanotubes were characterized by SEM, AFM, and TEM. Since the length of the nanotubes influences sensor characteristics, we study in details the effects of changing Ni and TiN thickness on the physical properties of the nanotubes. In this paper, we report the observation of a threshold Ni thickness of about 4 nm, when the average CNT growth rate switches from an increasing to a decreasing function of increasing Ni thickness, for a process temperature of 700°C. This behavior is likely related to a transition in the growth mode from a predominantly “base growth” to that of a “tip growth.” For Ni layer greater than 9 nm the growth rate, as well as the CNT diameter, variations become insignificant. We have also observed that a TiN barrier layer appears to favor the growth of thinner CNTs compared to a SiO2 layer

Phonon localization in heat conduction

Copyright © 2018 The Authors, some rights reserved; Nondiffusive phonon thermal transport, extensively observed in nanostructures, has largely been attributed to classical size effects, ignoring the wave nature of phonons. We report localization behavior in phonon heat conduction due to multiple scattering and interference events of broadband phonons, by measuring the thermal conductivities of GaAs/AlAs superlattices with ErAs nanodots randomly distributed at the interfaces. With an increasing number of superlattice periods, the measured thermal conductivities near room temperature increased and eventually saturated, indicating a transition from ballistic to diffusive transport. In contrast, at cryogenic temperatures the thermal conductivities first increased but then decreased, signaling phonon wave localization, as supported by atomistic Green’s function simulations. The discovery of phonon localization suggests a new path forward for engineering phonon thermal transport

The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures

The success of van der Waals heterostructures made of graphene, metal dichalcogenides and other layered materials, hinges on the understanding of charge transfer across the interface as the foundation for new device concepts and applications. In contrast to conventional heterostructures, where a strong interfacial coupling is essential to charge transfer, recent experimental findings indicate that van der Waals heterostructues can exhibit ultrafast charge transfer despite the weak binding of these heterostructures. Here we find, using time-dependent density functional theory molecular dynamics, that the collective motion of excitons at the interface leads to plasma oscillations associated with optical excitation. By constructing a simple model of the van der Waals heterostructure, we show that there exists an unexpected criticality of the oscillations, yielding rapid charge transfer across the interface. Application to the MoS(2)/WS(2) heterostructure yields good agreement with experiments, indicating near complete charge transfer within a timescale of 100 fs